EL SEGUNDO, Calif., – Navitas Semiconductor the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) has announced a virtual non-deal roadshow hosted by Baird on March 3rd, 2022.
GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These GaNFast™ power ICs become easy-to-use, high-speed, high-performance ‘digital-in, power-out’ building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions. An estimated $13.1B electrification opportunity includes mobile fast chargers and adapters, data centers, solar energy, and EV.
“We’re grateful to Baird for this chance to update investors on Navitas GaN, as we expand from our #1 position in mobile fast and ultra-fast chargers into consumer, data center, solar and EV markets,” said Gene Sheridan, CEO and co-founder. “Charger revenue is doubling each year and we’re on track with penetration into higher-power markets, adding dedicated design centers to accelerate adoption of this revolutionary technology and ‘Electrify Our World™’.”
Mr. Sheridan will present in a group webcast and Q&A at 11am on March 3rd, hosted by Baird Senior Research Analyst, Tristan Gerra, with 1-on-1 investor meetings scheduled throughout the day. To register, please click: https://goto.webcasts.com/starthere.jsp?ei=1524993&tp_key=126f49426d
