CEA-Leti to Present Research Breakthroughs at IEDM

Leti Devices Workshop, an Annual IEDM Feature for Registered Guests, Will Cover ​​‘From Materials to System Innovations, Shaping the Future of Global Connectivity’

0
65

CEA-Leti will highlight its most recent research advances in several fields at the 2024 International Electron Devices Meeting (IEDM), Dec. 7-11, at the Hilton San Francisco Union Square. Presentations include three R&D firsts:

  • ​ferro-based memory scaling integrated into the back-end-of-line (BEOL) at the 22nm FD-SOI technology node
  • an integrated phase modulator and sensor (IPMS) offering ​​improved scalability, compactness, and intrinsic optical alignment for digital optical phase conjugation (DOPC) applications, and
  • the first adaptation of the forward-forward algorithm for resistive memory. 

“CEA-Leti, together with its academic and industrial partners, will present cutting-edge results in the fields of low-power components, quantum technologies, RF, heterogeneous integration, emerging memories, and new computing paradigms,” said Thomas Ernst, scientific director, CEA-Leti.

7 papers​​

​Session 8.1:

Monday, Dec. 9 @ 1:35 p.m.
Continental 7-9by Arnaud Verdant“A 58×60 π/2-Resolved Integrated Phase Modulator And Sensor With Intra-Pixel Processing”

Session 9.4:

Monday, Dec. 9 @ 2:50 p.m.
Imperial A

by Luca Lucci

“CMOS compatible 200 mm GaN-on-Si HEMTs for RF switch applications with 36 dBm CW power handling and 200 fs RonCoff”​

Session 10.6:

Monday, Dec. 9 @ 4:05 p.m.
Imperial B

a collaborative paper with Bruna Paz of Quobly

“FD-SOI Platform for Quantum Computing”​

Session 11.2:

Tuesday, Dec. 10 @ 9:30 a.m.
Grand Ballroom A

by Simon Martin and Laurent Grenouillet

“Hf0.5Zr0.5O2​ FeRAM scalability demonstration at 22nm FD-SOI node for embedded applications”​

Session 15.3:

Tuesday, Dec. 10 @ 9:55 a.m.
Continental 5

a collaborative paper with Shuhan Liu of Stanford University​

“Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”

Session 13.4:

Tuesday, Dec. 10 @ 10:45 a.m.
Continental 1-3

a collaborative paper with Bastien Imbert of Aix-Marseille University / CNRS​

“Forward-Forward Learning Exploiting Low-Voltage Reset of RRAM”​​

​​​​​Session 34.7:

Wednesday, Dec. 11 @ 12 p.m.
Continental 5

by Alexis Divay

“Fine characterization and Modeling of the Frequency Dependence of TDDB in RF domain (F>10GHz)”​​​

DISCOVER CEA-LETI’S MAJOR SCIENTIFIC RESULTS AT LETI DEVICES WORKSHOP​​​

This year’s theme for this annual event at IEDM’s December conference is From materials to system innovations, shaping the future of global connectivity. It will begin at 5:30 PM, Dec. 8, at the Nikko Hotel, 3rd floor (directly opposite the Hilton hotel). ​