Many industrial applications are moving towards higher power levels with minimized power losses. One way to achieve this is to increase the DC link voltage. Infineon Technologies is addressing this market trend with the CoolSiC Schottky diode 2000 V G5 product family, the first discrete silicon carbide diodes with a breakdown voltage of 2000 V, introduced in September 2024. The product portfolio has now been expanded to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product family fits perfectly for applications with DC link voltages up to 1500 VDC, making it ideal for solar and EV chargers.
The CoolSiC Schottky diode 2000 V G5 in the TO-247-2 package is available with current ratings ranging from 10 to 80 A. It allows developers to achieve higher power levels in their applications while reducing the component count by half compared to 1200 V solutions. This simplifies the overall design and facilitates a seamless transition from multi-level to two-level topologies.
In addition, the Schottky diode in the TO-247-2 package incorporates .XT interconnection technology, which significantly reduces thermal resistance and impedance, thereby enhancing heat management. Humidity robustness has been validated through HV-H3TRB reliability testing. The diodes exhibit neither reverse recovery nor forward recovery, and feature a low forward voltage, ensuring improved system performance.
The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon launched in the spring of 2024. In addition to the TO-247-2 package, the CoolSiC Schottky Diode 2000 V is also available in the TO-247PLUS-4 HCC package.
