These use the latest generation KIOXIA BiCS FLASH 3D flash memory with 3-bit-per-cell (triple-level cell, TLC) technology, and is available in a 132-BGA package. Densities range from 512 gigabits (64 gigabytes) to 4 terabits (512 gigabytes) to support the unique requirements of industrial applications – including telecommunication, networking and embedded computing. The devices support the temperature range -40°C to +85°C. Due to the fact that flash memory cell performance and reliability improve with a smaller number of bits per cell, the new KIOXIA devices feature 1-bit-per-cell (single-level cell, SLC) mode for applications that require faster read/write times and high cell endurance.
About Kioxia
In 1987, KIOXIA invented the world’s first NAND flash memory not to require a power source (non-volatile memory). This technology is now being used in various fields ranging from digital devices such as smartphones to data centers and has become an indispensable core component of the information society.
Products & Technology
KIOXIA addresses customer needs through our technological leadership in the field of flash memory and SSDs, and through our broad portfolio of products.
Memory
Flash memory is now used in applications ranging from digital devices such as smartphones to storage memory products, including USB flash drives and SSDs. We will continue to meet the needs of customers by delivering 3D flash memory BiCS FLASH™ technology that delivers even greater storage capacity, and wide range of flash memory products.
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