SemiQ Expands Gen3 SiC MOSFET Offering, Launches 1200 V TSPAK Series

With Top-Side Cooling and Isolated Thermal Path - On display at PCIM – Hall 4A, Booth 109

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SemiQ, a designer, developer, and global supplier of superior silicon carbide (SiC) solutions for ultra-efficient, high-performance, and high-voltage applications, has announced the expansion of its Gen3 SiC MOSFET offering, launching a 1200 V TSPAK-packaged series.

SemiQ will exhibit the new devices for the first time at PCIM 2025 in Nuremberg at Alfatec’s stand (Hall 4A, Booth109), from the 6th to the 8th May.

The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27 and 101 A and pulsed drain current from 70 to 350 A, with device resistances (RDSon) ranging from 80 to 16 mΩ respectively.

All devices are operational to 175oC and have been tested to voltages greater than 1400 V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800 mJ (RDSon = 16 mΩ, 160 mJ for the 80 mΩ device).

The easy-to-parallel devices implement top-side cooling and an isolated thermal path with a ceramic isolated back paddle. The package includes a driver source kelvin pin for gate driving as well as a gate pin, 5 source pins and a drain tab.

The TSPAK MOSFETs offer a lower capacitance, reduced switching losses, longer clearance distance and higher overall system efficiency. SemiQ is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and on-board chargers, motor drives, high-voltage DC/DC converters and UPS/switch mode power supplies.

Dr. Timothy Han, President at SemiQ said: “The launch of the TSPAK Gen3 SiC MOSFET family enables the creation of higher power density supplies, at a lower system cost as well as more compact system designs at large scale.”

All devices in the series are housed in a 18.6 x 14.0 x 3.5 mm TSPAK package, have a zero gate voltage drain current of 0.1 µA, a -10/10 nA gate-source leakage current and a 3.5 V gate threshold voltage (cited characteristics measured at 25oC). The series is available immediately.

The series’ cycle times range from 49 ns (80 mΩ MOSFET) to 114 ns (16 mΩ), and the devices have total switching energy of between 153 µJ (80 mΩ MOSFET) and 1565 µJ (16 mΩ). Key specifications are shown in the table below – all characteristics shown have been measured at 25oC.

  GP3T016A120TSGP3T020A120TSGP3T040A120TSGP3T080A120TS
Drain source voltageVDS1200 V1200 V1200 V1200 V
Drain source on resistanceRDSon16 mΩ18 mΩ38 mΩ80 mΩ
Continuous drain currentID101 A89 A50 A27 A
Pulse drain currentID.pulse350 A280 A140 A70 A
Power dissipationPtot273 W250 W158 W102 W
Thermal resistanceRthJC0.49oC/W0.53oC/W0.83oC/W1.25oC/W
Turn on switching energyEON1333 µJ986 µJ639 µJ117 µJ
Turn off switching energyEOFF232 µJ159 µJ101 µJ36 µJ
Turn on delaytDon19 ns80 ns15 ns10 ns
Rise timetR13 ns10 ns9 ns3 ns
Turn off delaytDoff64 ns60 ns32 ns20 ns
Fall timetF18 ns17 ns10 ns16 ns

Please visit SemiQ.com for specifications and to request samples or volume pricing.

1200V Gen3 SiC TSPAK MOSFET series is available in parts: GP3T016A120TS (16mΩ, 101A), GP3T020A120TS (18mΩ, 89A), GP3T040A120TS (38mΩ, 50A), and GP3T080A120TS (80mΩ, 27A).

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