Kawasaki, Japan : Toshiba Electronic Devices and Storage Corporation has released the ” TCK421G ” for 20V power lines as the first product in its new ” TCK42xG Series ” of Mosfet Gate Driver ICs. Devices in this series are dedicated to gate voltage control of external N-channel MOSFETs based on input voltage, and have an overvoltage lockout function. Its shipment is starting from today.
The TCK421G is suitable for configuring power multiplexer circuits or load switch circuits equipped with reverse-current blocking, in conjunction with back-to-back connections to external N-channel MOSFETs. It includes a charge pump circuit that supports a wide range of input voltages, from 2.7V to 28V, and supplies a constant voltage to the gate-source voltage of the external MOSFET with its intermittent operation. It allows switching of large current or electric current.
The WCSP is housed in a 6G [1] package, one of the smallest in the industry [2]. The TCK421G realizes high-density mounting in smaller devices, such as wearables and smartphones, thereby helping to reduce their footprint.
Toshiba will continue to develop the TCK42xG series and plans to introduce a total of six versions. The overvoltage lockout of the TCK42xG series will support an input voltage of 5V to 24V. The external MOSFET will be provided with two types of gate output voltages, 5.6V and 10V, for different gate-source voltages. According to the user’s device, the overvoltage lockout and gate output voltage can be selected.
Notes:
[1] 1.2mm x 0.8mm
[2] Between Mosfets Gate Driver ICs. Toshiba survey, as of February 2022.
Application
- wearable
- smart Fone
- Notebook PC, Tablet
- storage equipment, etc.
Features of the new series
- The gate-source voltage setting (5.6V, 10V) depends on the input voltage with the built-in charge pump circuit.
- Supports overvoltage lockout from 5V to 24V
- Low Input Off Current: I Q(OFF) = 0.5μA (max) @V IN =5V, T a = -40 to 85°C
Key Features
(Unless otherwise specified, T a =25°C) | |||
part number | TCK421G | ||
package | Name | WCSP6G | |
Size (in mm) | 1.2×0.8 (typ.), t=0.35 (max max) | ||
operating range | Input Voltage V IN (V) | @T a = -40 to 85°C | 2.7 to 28 |
electrical characteristics | V INUVLO threshold, V out falling V IN_UVLO typ./max (V) | @T a = -40 to 85°C for V IN_UVLO max | 2.0/2.5 |
V IN UVLO hysteresis V IN_UVhyst type. (V) | , | 0.2 | |
V in OVLO threshold, V out falling V IN_OVLO min/max (V) | @T a = -40 to 85°C | 22.34/24.05 | |
V IN OVLO hysteresis V IN_OVhyst typ. (V) | , | 0.12 | |
Input quiescent current (ON state) [3] I Q(ON) typ. (μA) | @V IN =5V | 140 | |
@V IN =12V | 185 | ||
standby current (off state) I Q(OFF) max (μA) | @V IN =5V, T a = -40 to 85°C | 0.5 | |
@V IN =12V, T a = -40 to 85°C | 0.9 | ||
getter drive voltage (V GATE1 -V IN ) (V GATE2 -V IN ) V GS min/typ./max (V) | @V IN =2.7V | 8/9.2/10 | |
@V IN =5V | 9/10/11 | ||
@V IN = 9V | 9/10/11 | ||
@V IN =12V | 9/10/11 | ||
@V IN =20V | 9/10/11 | ||
V GS ON time t ON type. (ms) | @V IN =5V, C GATE1,2 =4000pF | 2.9 | |
V GS OFF time t OFF type. (μs) | V IN = 5V, @C GATE1,2 =4000pF | 52 | |
OVLO V GS turn OFF time t OVP type. (μs) | @C GATE1,2 =4000pF | 34 | |
Sample Checking and Availability | buy online |
Notes
[3] Control terminal current (I CT ) is not included.
Follow the link below for more information on the new product.
TCK421G
TCK42xG Series
To check new product availability at online distributors, visit:
TCK421G