New Dual N-Channel 6A/20V MOSFET is Designed for LIB Charging

Good-Ark Semi’s MOSFET with ESD Protection from New Yorker Electronics provides Low Gate Charge and High Repetitive Avalanche Rating

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NORTHVALE, New Jersey, USA – New Yorker Electronics has announced its availability of the new Good-Ark Semiconductor SSF2418E 6A/20V Dual N-Channel MOSFET with ESD protection in the SOT-23-6L package. The Good-Ark SSF2418E utilizes the latest trench technologies and advance process techniques to achieve excellent RDS(ON), low gate charge and a high repetitive avalanche rating.

Equipped with ESD protection up to 2KV, this Halogen-free device is suitable for use as a unidirectional or bidirectional load switch, facilitated by its common drain configuration. Used in DC-DC conversion, load switching and battery protection, additional benefits include its high energy efficiency, fast switch speed and low input and output leakage. It is also available in the TSSOP-8 package.

Features & Benefits:

  • Advanced trench MOSFET process technology
  • Ultra low on-resistance with low gate charge
  • Fast switching and reverse body recovery
  • 150°C operating temperature
  • Lead free product

Applications:

  • PWM
  • Load Switching
  • General Purpose

Good-Ark, one of the largest diode, rectifier and bridge rectifier manufacturers in the world, has been certified in Quality: ISO9001: 2008, Automotive: ISO/TS16949, Environment: ISO14001 & QC080000, Health & Safety: OHSAS18001 and Information Security: ISO/IEC27001.

As a franchise distributor of Good-Ark Semiconductor, New Yorker Electronics supplies its full line of Semiconductor Diodes, Rectifiers, Bridge Rectifiers, Protection devices (TVS, Chip Fuse & Thermistor) and MOSFETs (Small Signal & Power MOSFETs supported by Trench Technology) in through-hole to surface-mount devices as well as wafer/bare die for hybrid applications.