New ICeGaN GaN Power ICs: High Efficiency for Data Centers, Inverters, SMPS

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Cambridge GaN Devices the fabless, clean-tech semiconductor company thatdevelops energy-efficient GaN-based power devices that make greener electronics possible, haslaunched its lowest ever on-resistance (R DS(on) ) parts which have been engineered with a new die andnew packages to deliver the benefits of GaN to high-power applications such as data centres, inverters,motor drives and other industrial power supplies.New ICeGaN GaN Power ICs: High Efficiency for Data Centers, Inverters, SMPS New ICeGaN P2 series ICs feature R DS(on) levels downto 25 mΩ, supporting multi kW power levels with the highest efficiency.

ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD

“The explosive growth of AI is leading to a significant increase in energy consumption, prompting datacentre systems designers to prioritise the use of GaN for high-power, efficient power solutions. Thisnew series of New GaN Power for Data Center Power GaN ICs is a stepping stone for CGD to support our customers and partners byachieving and exceeding 100 kW/rack power density in data centres, required by most recent TDP(Thermal Design Power) trends for high-density computing. Turning to motor control inverters,developers are looking to GaN to reduce heat for smaller, longer-lasting system power. New ICeGaN GaN Power for Data Center These are justtwo examples of markets that CGD is now aggressively targeting with these new high-power ICeGaICs. Simplified gate driver design and reduced system costs, combined with advanced high-performance packaging, make P2 series ICs an excellent choice for these applications.”

Incorporating an on-chip Miller Clamp to eliminate shoot-through losses during fast switching andimplementing 0 V turn off to minimise reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other incumbent technologiesnNew ICeGaN GaN Power for Data Center. The new packages offer improved thermal resistance performance as low as 0.28 K/W – again, equivalent or better than anything else currently available on
]the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package facilitates optimal PCB layout and simple paralleling for scalability, enabling customers to address multikW applications with ease. The new packages have also been engineered to improve productivity, withwettable flanks to simplify optical inspection.

New P2 Series ICeGaN power ICs are sampling now. The family includes four devices with R DS(on) levelsof 25 mΩ and 55 mΩ, rated at 60 A and 27 A, in 10 x 10 mm footprint DHDFN-9-1 and BHDFN-9-1(Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the P2 series canbe driven using any standard MOSFET or IGBT driver.

Two demo boards feature the new P2 devices: a single leg of a 3-phase automotive inverter demoboard, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3kWtotem-pole power factor correction demo board

The new P2 series GaNNew ICeGaN GaN for Data Center power ICs and demo boards were unveiled publicly at the PCIMexhibition on CGD’s booth # 7 643, Nürnberg Messe, Nuremberg, Germany, 11-13th June 2024.

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