Kawasaki, Japan : Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has introduced two silicon carbide SiC MOSFET dual modules. These are the “ MG600Q2YMS3 ” voltage rating of 1200V and drain cutting rating of 600A; and “ MG400V2YMS3 ” which has a voltage rating of 1700V and a drain current rating of 400A. These are the first Toshiba products with this voltage rating. These are connected to the previously released MG800FXF2YMS3 and are in the form of 1200V, 1700V and 3300V devices.
The new module offers mounting adaptability and is in line with the widely used silicon (Si) IGBT modules. The low energy loss feature meets the requirements of high efficiency and size reduction in industrial equipment. For example converters and inverters for railway vehicles and renewable energy power systems.
use
- Inverters and converters for railway vehicles
- Renewable Energy Power Generation System
- motor control device
- High Frequency DC-DC Converter
Features
- Mounting Friendly with Si IGBT Modules
- Less loss compared to Si IGBT modules
MG600Q2YMS3 (MG600Q2YMS3)
V ds(on)sense = 0.9V (typ) @ I d = 600A, T ch = 25°C
E on =25mJ (Typ.), E off =28mJ (Typ.) @ V ds = 600V, I d = 600A, T ch =150°C
MG400Q2YMS3 (MG400V2YMS3)
V ds(on)sense = 0.8V (typ) @ I d = 400A, TCh = 25°C
E On = 28mJ (Typ), E Off =27mJ (Typ) @ V DS = 900V, I D = 400A, T CH = 150°C
- Built-in NTC Thermistor
Main Specification
| [Unless nothing else is specified, @T c =25°C (T c =25°C)] | ||||
| part number | MG600Q2YMS3 | MG400V2YMS3 | ||
| package | 2-153A1A | |||
| absolute Maximum ratings | Drain-source voltage V dss (V) | 1200 | 1700 | |
| Gate-source voltage V gss (V) | +25/-10 | +25/-10 | ||
| Drain Current ( DC ) Id (A) | 600 | 400 | ||
| Drain Current (Pulsed) I dp (A) | 1200 | 800 | ||
| Channel Temperature T CH (°C) | 150 | 150 | ||
| Isolation Voltage V Iso (VRMS) | 4000 | 4000 | ||
| electrical Features | Drain-source on-voltage (sense) VDS ( On ) Sans Type . (v) | @V GS =+20Volts, T ch 25°C | 0.9 @ID 600A | 0.8 @ID 400A |
| Source-drain-on voltage (sense) VSD ( on ) sans type (V) | @V GS =+20V, T CH 25°C | 0.8 @IS 600A | 0.8 @ IS 400A | |
| Source-drain off-voltage (sense) V SD ( Off ) Sense Type (V) | @V GS = -6V, T CH 25°C | 1.6 @ IS 600A | 1.6 @ IS 400A | |
| Turn-on Switching Loss on Type (MJ) E on Type. (MJ) | @T CH =150°C | 25 @ V ds = 600V, ID = 600A | 28 @V ds = 900V, ID = 400A | |
| Turn-off Switching Loss E Off Type (MJ) E of Type (MJ) | @T CH =150°C | 28 @ V ds = 600V, ID = 600A | 27 @V ds = 900V, id=400a | |
| Thermistor Characteristics | Rated NTC Resistance R Type. (kΩ) | 5.0 | 5.0 | |
| ntc b value b type. (Of) | TNTC=25 – 150°C | 3375 | 3375 |
For more information about new products visit the link below
MG600Q2YMS3
MG400V2YMS3
For more information on Toshiba’s SIC power equipment, visit the link
SiC Power Devices
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* The information in this document, including product prices and specifications, service content and contact information, is as of the date of the announcement and is current but subject to change without prior notice.
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