Toshiba’s Introduced 1200V and 1700V Silicon Carbide MOSFET

Toshiba's newly introduced 1200V and 1700V silicon carbide MOSFET (MOSFET) modules will contribute to small efficient industrial equipment

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Kawasaki, Japan : Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has introduced two silicon carbide SiC MOSFET dual modules. These are the “ MG600Q2YMS3 ” voltage rating of 1200V and drain cutting rating of 600A; and “ MG400V2YMS3 ” which has a voltage rating of 1700V and a drain current rating of 400A. These are the first Toshiba products with this voltage rating. These are connected to the previously released MG800FXF2YMS3 and are in the form of 1200V, 1700V and 3300V devices.

The new module offers mounting adaptability and is in line with the widely used silicon (Si) IGBT modules. The low energy loss feature meets the requirements of high efficiency and size reduction in industrial equipment. For example converters and inverters for railway vehicles and renewable energy power systems.

use

  • Inverters and converters for railway vehicles
  • Renewable Energy Power Generation System
  • motor control device
  • High Frequency DC-DC Converter

Features

  • Mounting Friendly with Si IGBT Modules
  • Less loss compared to Si IGBT modules

MG600Q2YMS3 (MG600Q2YMS3)
ds(on)sense = 0.9V (typ) @ I d = 600A, T ch = 25°C
on =25mJ (Typ.), E off =28mJ (Typ.) @ V ds = 600V, I d = 600A, T ch =150°C

MG400Q2YMS3 (MG400V2YMS3)
ds(on)sense = 0.8V (typ) @ I d = 400A, TCh = 25°C
On = 28mJ (Typ), E Off =27mJ (Typ) @ V DS = 900V, I D = 400A, T CH = 150°C

  • Built-in NTC Thermistor

Main Specification

[Unless nothing else is specified, @T c =25°C (T c =25°C)]
part numberMG600Q2YMS3MG400V2YMS3
package2-153A1A
absolute

Maximum

ratings
Drain-source voltage V dss (V)12001700
Gate-source voltage V gss (V)+25/-10+25/-10
Drain Current ( DC ) Id (A)600400
Drain Current (Pulsed) I dp (A)1200800
Channel Temperature T CH (°C)150150
Isolation Voltage V Iso (VRMS)40004000
electrical

Features
Drain-source on-voltage (sense)

VDS ( On ) Sans Type . (v)
@V GS =+20Volts,

ch 25°C
0.9

@ID 600A
0.8

@ID 400A
Source-drain-on voltage (sense)

VSD ( on ) sans type (V)
@V GS =+20V,

CH 25°C
0.8

@IS 600A
0.8

@ IS 400A
Source-drain off-voltage (sense)

SD ( Off ) Sense Type (V)
@V GS = -6V,

CH 25°C
1.6

@ IS 600A
1.6

@ IS 400A
Turn-on Switching Loss on Type (MJ)

on Type. (MJ)
@T CH =150°C25

@ V ds = 600V,

ID = 600A
28

@V ds = 900V,

ID = 400A
Turn-off Switching Loss E Off Type (MJ)

of Type (MJ)
@T CH =150°C28

@ V ds = 600V,

ID = 600A
27

@V ds = 900V,

id=400a
Thermistor CharacteristicsRated NTC Resistance R Type. (kΩ)5.05.0
ntc b value b type. (Of)TNTC=25 – 150°C33753375

For more information about new products visit the link below
MG600Q2YMS3
MG400V2YMS3

For more information on Toshiba’s SIC power equipment, visit the link
SiC Power Devices

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* The information in this document, including product prices and specifications, service content and contact information, is as of the date of the announcement and is current but subject to change without prior notice.