Vishay New FRED Pt Gen 5 Hyperfast and Ultrafast Rectifiers

MALVERN, Pa.— Vishay Intertechnology, Inc. has introduced 15 new FRED Pt Gen 5 600 V and 1200 V Hyperfast and Ultrafast rectifiers in the compact SOT-227 package. Offering the best conduction and switching loss trade-off for devices in their class, the Vishay Semiconductors rectifiers are designed to increase the efficiency of high frequency converters and of soft-switched or resonant designs.

Matched to operate with MOSFETs or high speed IGBTs, the devices released today are optimized for PFC and output rectification stages for EV / HEV battery charging stations, booster stages for solar inverters, and UPS. For these applications, the rectifiers offer lower conduction losses than previous-generation devices while maintaining low reverse recovery losses. In addition, the semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built.

The devices offer current capability of 30 A at 600 V in the single-phase bridge configuration and 60 A to 300 A at 600 V and 1200 V in the dual-diode configuration. The rectifiers are available in X-type Hyperfast and H-type Ultrafast speed classes, with H-type devices offering the advantage of lower conduction losses and X-type devices featuring faster recovery times. The components offer high-temperature operation to +175 °C.

Device Specification Table:

¹ Per diode
² I_F = 30 A, dI_F/dt = 1000 A/μs, V_R = 400 V, T_J = 25 °C
³ I_F = 60 A, dI_F/dt = 1000 A/μs, V_R = 400 V, T_J = 25 °C
⁴ I_F = 75 A, dI_F/dt = 1000 A/μs, V_R = 400 V, T_J = 25 °C
⁵ I_F = 150 A, dI_F/dt = 1000 A/μs, V_R = 400 V, T_J = 25 °C
⁶ I_F = 30 A, dI_F/dt = 1000 A/μs, V_R = 800 V, T_J = 25 °C
⁷ I_F = 60 A, dI_F/dt = 1000 A/μs, V_R = 800 V, T_J = 25 °C
⁸ I_F = 120 A, dI_F/dt = 1000 A/μs, V_R = 800 V, T_J = 25 °C

Sample quantities of the new FRED Pt rectifiers are available now. Production quantities are available with lead times of 26 weeks.