Power electronics has taken a wide turn towards the adoption of wide bandgap (WBG) devices such as GaN (Gallium Nitride) and SiC (Silicon Carbide). While silicon still dominates the market, the emergence of GaN and SiC devices will soon direct technology toward new, more efficient solutions. The revenue from SiC devices will account for more than 10% of the market by 2025, while revenue from GaN devices will be more than 2% of the market by 2025 as per the Yole Report.
Prominent suppliers of SiC power devices include STMicroelectronics, Cree/Wolfspeed, Rohm, Infineon Technologies, ON Semiconductor, and Mitsubishi Electric. For GaN, Power Integrations and Infineon as the main players, as well as innovative startups such as Navitas Semiconductor, Efficient Power Conversion (EPC), GaN Systems, and Transphorm.
With the slowdown in world economic growth, the Wide Bandgap Semiconductor industry has also suffered a certain impact, but still maintained a relatively optimistic growth, the past four years, Wide Bandgap Semiconductor market size to maintain the average annual Growth rate of 15 from million USD in 2014 to million USD in 2019, analysts believe that in the next few years, Wide Bandgap Semiconductor market size will be further expanded, we expect that by 2024, The market size of the Wide Bandgap Semiconductor will reach million USD.
The wide bandgap semiconductor market is anticipated to grow in the forecast period owing to driving factors such as extended battery life of electronic gadgets, use in ultraviolet LED are the primary factors expected to drive the growth of this market whereas high cost of these solutions might hinder the growth of wide bandgap semiconductor market. The market is likely to showcase opportunities for the growing semiconductor and electronics industry.
The “Global Wide bandgap semiconductor Market Analysis to 2027” is a specialized and in-depth study of the wide bandgap semiconductor industry with a special focus on the global market trend analysis. The report aims to provide an overview of a wide bandgap semiconductor market with detailed market segmentation by type, application and geography. The global wide bandgap semiconductor market is expected to witness high growth during the forecast period. The report provides key statistics on the market status of the leading wide bandgap semiconductor market players and offers key trends and opportunities in the market.
The global wide bandgap semiconductor market is segmented on the basis of type and application. Based type, the market is segmented as on aluminum nitride, boron nitride, silicon carbide, gallium nitride. On the basis of application, the market is divided into it & telecommunication, automotive, defence and aerospace, consumer electronics, and others.
- Manufacturer / Potential Investors.
- Traders, Distributors, Wholesalers, Retailers, Importers and Exporters.
- Association and government bodies.
Power Electronics Players All Set For 2021
ST is seeing the continuation of strong growth in SiC business and it is moving rapidly into the industrial space. Half of the ST customer engagements for SiC projects are for Industrial applications. And in digitization, that is being driven by the ongoing trends toward Electronic Control Units (ECUs) and Smart Gateways, as well as the growing demand for multi-application, deterministic, Integrated Controllers for the automotive market to maximize safety and security, where ST just made an announcement with a well-known and -regarded tier-one automotive electronic module supplier.
Infineon Technologies with its unique position of being the only company currently offering silicon (Si), silicon carbide (SiC), insulated-gate bipolar transistor (IGBT) and gallium nitride (GaN) devices, is the customer’s first choice in all segments. Company offers one of the most comprehensive power portfolios in the industry ranging from ultra-low to high-voltage power devices.
In 2021, ROHM is going to unveil new buck-boost battery chargers and USB PD controllers for mobile and portable products that reduce the required PCB footprint. Advanced process technology will also be utilized in 2021 by ROHM to deliver an expanded silicon carbide product line. The company’s 4th generation SiC MOSFETs use a double-trench structure on thinner SiC dies to drastically cut RDS (on). For high power systems, the increased current density on the MOSFET chip level will be coupled with soldering and silver-sintering compatibility on both sides of the SiC die to achieve significantly improved power cycling reliability and better thermal performance with flexible module packages.
Power Integrations is participating in the rapid increase in the use of brushless DC (BLDC) motors. PI making very impressive improvements in inverter efficiency in three-phase applications, and meaningful system cost reduction using new single-phase motor drivers.
Brushless motors contribute to high efficiency, high-power density, good speed-torque characteristics, simple speed control and low acoustic noise, and are an excellent contributor to a high score for appliances targeting the new EU energy efficiency labelling scheme.
Looking forward to 2021, UnitedSiC is expanding its Generation 4 platform which has been introduced in early December 2020. The company has released this platform with Industry leading 0.7 mohm-cm^2 Rds-A at the 750V node. Also deploying these devices across additional voltage and package types. UnitedSiC is about to start the engagements providing higher levels of integration using our SiC FETs in integrated solutions that include integrated gate drivers, temperature sense, current sense, and slew rate control. These sophisticated products will simplify power supply design while reducing component count and easing initial design, all while providing more efficient, power dense designs.
In 2021, Transphorm intends to utilize the net proceeds to scale volume shipments of GaN products for the fast-charging power adapter, server, communication and gaming power supply markets as well as converters/inverters for industrial and renewable applications, expanded sampling and qualification in EV automotive applications, growth of its epi wafer business, as well as working capital to support general operations.