Gate Drive DC/DC Range Expanded


Asymmetric regulated outputs suit IGBT, Si, SiC, and GaN cascode gate drives – It is now simpler than ever to generate power for IGBT, Si, SiC, and GaN cascode gate drivers with our new R24C2T25 DC/DC converter. The SMT part, in a compact 7.5 x 12.83mm 36-pin SSOP package, conveniently provides dual asymmetric output voltages, programmable by external resistor networks.

One output can be set between +2.5 and +22.5VDC and the other between -2.5 and -22.5VDC with an overall positive to negative voltage of 18 to 25VDC, for example +15/-3V, to drive SiC gates efficiently. Voltages are maintained within +/-1.5%, preventing the risk of over-voltage and damage. Total power available is 2W up to 82°C ambient with 2.5W available to 75°C. Useful derated power is also available to the package maximum of 125°C.

Isolation of the R24C2T25 is 3kVAC/1min with an ultra-low coupling capacitance of 3.5pF and a common mode transient immunity of +/-150V/ns. This makes the parts ideal for powering high-side gate drives with fast dV/dt and dI/dt power switch edge rates.

The R24C2T25 features soft start, input under-voltage and over-voltage lockout, thermal shutdown, and output over-power protection. Output over-voltage and under-voltage lockout are also provided to ensure power devices cannot be stressed by invalid gate voltages. A power-good signal is provided along with ON/OFF control to put the device into standby mode with less than 700µA current draw.