Power semiconductors are at the heart of the electrification trends. They are a critical part of the systems that power EVs. They define the key metrics like performance, reliability, and economics.
Power semiconductors make up a major cost in any system, and a careful selection of the right device technologies is very important in achieving the balance between performance and economies.
It is important to understand that electronic systems are required to handle high powers and currents in harsh operating conditions. Hence the thermo-mechanical design of the electronic systems is of paramount importance. The performance and safety of the power semiconductors depend highly on the thermo-mechanical designs and materials used to build the systems.
The primary focus in 2026 is to identify materials, processes that would enhance the thermo-mechanical performance of our systems. This is a critical aspect of achieving high performance, reliability, and localization of Power Semiconductor solutions. Deep engagements with the local manufacturing ecosystem are essential for sustained growth and relevance of the local power semiconductor systems efforts.
A variety of power semiconductor devices are available for different systems to maximize performance. It is important to understand the subsystem functions, operation, and performance requirements to choose the right power semiconductors. EV 2W / 3W and small delivery vehicles use low battery voltages (< 96V). They use low-voltage silicon MOSFETs for Motor control, Battery Management Systems, DCDC converters, etc. These devices offer the best cost-performance optimization.
Significant innovations in device designs and processes keep improving the performance of the LV MOSFETs due to a great demand for the low voltage MOSFETs in multiple application segments like EVs, automotive, Telecom, and other industry applications. The latest development is the introduction of newer, efficient high-current packages like TOLL and TOLT packages. TOLT particularly, is a breakthrough package offering from the industry. The TOLT package allows SMT mounting of the devices while allowing direct heat transfer from the top side of the package. This is going to transform the high-power system designs.
GaN devices, owing to their low RDSON and fast switching, may be a top contender to the LV MOSFETs. It does offer significant benefits in high-frequency switching applications such as DCDC converters, PFC circuits, etc.
For larger power converters and fast chargers, efficiency and energy conservation is critical. In such chargers, wide-bandgap power semiconductors such as SiC and GaN are a better fit. They offer Lower losses and faster switching speeds. As a result, the system efficiency can be improved, and the size can be reduced. However, the cost of such devices is usually higher than that of silicon-based devices. A careful trade-off needs to be studied to decide on the power semiconductors.Â
As the wideband gap devices switch much faster than the silicon-based devices, designing the systems using these devices requires a careful consideration of the circuit design, Gate driver selection, and layout of the PCBs and systems to reduce the effects of the parasitics is critical to ensure reliable operation. The WBG power semiconductors also have specific requirements for the Gate driver specifications. Especially, GaN devices have strict limits for the Gate drive voltage levels. It is essential to ensure safe operating conditions to achieve high reliability.
Even though the wideband gap devices are getting a lot of limelight, silicon IGBTs have a lot to offer in traction inverter applications. The inverters usually switch around 20 kHz and conduct large currents. IGBTs offer high efficiency at high current, low frequency applications. They are very robust and offer short-circuit capability. IGBTs also have a very robust gate to source specifications and are useful in applications like motor controllers. They also offer a low-cost option to wide band gap materials in this space. Recent developments in IGBT technologies make them a strong contender for these applications.
Besides the development in power semiconductor device technologies, packaging and thermal management aspects are critical to get maximum performance using these devices. An innovative approach to these aspects can result in maximum performance and lower cost per ampere delivered. A careful analysis of the complete thermal stack performance to reduce the temperature ripple is essential to improve the lifetime of the product. Increased ripple causes stress between different layers of the stack due to the differences in the temperature coefficient of expansion. These stresses can result in early failures and shortened lifetime of the product.
Overall, in 2026, the application of appropriate power semiconductor technologies and innovative thermal designs and packaging can result in maximized performance and long-term reliability. These metrics will result in a lower cost of ownership for the end customer.
