Vishay introduced new 80 V TrenchFET Gen IV n channel power MOSFET

80 V MOSFET Offers Best in Class On-Resistance Times Gate Charge FOM to Increase Efficiency Offered in PowerPAK SO 8 Single Package, Device Combines On Resistance Down to 2.35 mΩ With 55 nC Gate Charge and COSS of 614 pF

Vishay Siliconix SiR680ADP

MALVERN, Pa. — Jan. 29, 2020 — Vishay Intertechnology, today introduced a new 80 V TrenchFET Gen IV n channel power MOSFET in the 6.15 mm by 5.15 mm PowerPAK® SO-8 single package. Designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry, the Vishay Siliconix SiR680ADP offers best in class on-resistance times gate charge a key figure of merit (FOM) for MOSFETs used in power conversion applications of 129 mΩ*nC.

The device released today combines on-resistance down to 2.35 mΩ typical at 10 V with ultra low gate charge of 55 nC and COSS of 614 pF. These specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency. The MOSFET’s on-resistance times gate charge FOM is 12.2 % lower than the closest competing product and 22.5 % lower than the previous-generation device, making it the most efficient solution available for typical 48 V input to 12 V output DC/DC converters.

The SiR680ADP will serve as a building block in a wide variety of DC/DC and AC/DC conversion applications such as synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters, and the OR-ing function in systems such as telecom and data center server power supplies; solar micro-inverters; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.

Samples and production quantities of the SiR680ADP are available now, with lead times of 12 weeks.

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