Vishay Unveils 30 V N-channel TrenchFET Gen V Power MOSFET

Devices Offer RDS(ON) Down to 0.95 mΩ and Improved FOM of 29.8 mΩ*nC in PowerPAK® 1212 8S Package


MALVERN, Pa. —  Vishay Intertechnology has introduced a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies. Offered in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95 mΩ at 10 V, a 5 % improvement over the previous-generation product. In addition, the device delivers on-resistance of 1.5 mΩ at 4.5 V, while its 29.8 mΩ*nC on-resistance times gate charge at 4.5 V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market.

The SiSS52DN’s FOM represents a 29 % improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.

The SiSS52DN is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.

The device is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities of the SiSS52DN are available now, with lead times of 12 weeks.

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