ROHM Begins Mass Production of 650V GaN HEMTs

Increasing efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters

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ROHM has started with the  mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications. These new products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, Inc., that develops GaN devices.

Improving the efficiency of power supplies and motors, which account for most of the world’s electricity consumption, has become a significant hurdle to achieving a decarbonized society. The adoption of new materials such as GaN and SiC are key to improving the efficiency of power supplies.

After initiating mass production of 150V GaN HEMTs – featuring a gate breakdown voltage of 8V in 2022 – in March 2023 ROHM established control IC technology for maximizing GaN performance. This time, ROHM developed 650V GaN HEMTs featuring market-leading performance that contributes to higher efficiency and smaller size in a wider range of power supply systems.

The GNP1070TC-Z and GNP1150TCA-Z deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.

ROHM continues to improve device performance through its EcoGaN lineup of GaN devices that contributes to greater energy application savings and miniaturization. While developing ROHM products, we will also promote joint development through strategic partnerships to contribute to solving social issues by making applications more efficient and compact.

EcoGaN

Refers to ROHM’s new lineup of GaN devices. They contribute to energy conservation and miniaturization by maximizing GaN characteristics – to achieve lower application power consumption, smaller peripheral achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.